SiC high voltage switch

SiC high-voltage switches are composed of silicon carbide MOSFETs. Compared to traditional silicon field-effect transistor high-voltage switches, it can greatly reduce the impedance during conduction, significantly reduce the inherent capacitance of the switch, achieve higher switching frequency and better heat dissipation capability.

• Compared to traditional silicon field-effect transistor high-voltage switches, the conduction impedance can be significantly reduced by about 90%
• Compared to traditional silicon field-effect transistor high-voltage switches, the inherent capacitance is reduced by approximately 30% to 50%
• Significantly reduce static conduction loss and dynamic switching loss
• Fast endogenous diodes eliminate the need for external protective diodes in most applications
• Higher peak current capability and better short-circuit withstand capability