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Hakuto ion etching machine 20IBE-J

NegotiableUpdate on 07/20
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Overview

The Hakuto ion etching machine 20IBE-J, imported from Shanghai Bodong Japan and suitable for large-scale production, can be used for processing of any material The Hakuto ion etching machine 20IBE-J is equipped with an American KRI 20cm Kaufman ion source, with an etching uniformity of 5% and a silicon wafer Si etching rate of 20 nm/min. The sample stage is directly cooled (water-cooled) and rotates from 0 to 90 degrees, so the RF angle can be adjusted arbitrarily. Etching can be made into vertical, inclined, and other processing shapes as needed

Product Details

Hakuto ion etching machine 20IBE-J product advantages:

Main advantages of Hakuto ion etching machine:

1. Dry process microfabrication devices have been widely used in the development, research, and mass production of thin film magnetic heads, semiconductor components, MR sensors, and other fields

The characteristics of physical etching can be used for processing regardless of the material used, so it can be widely applied in various fields

3. Configure and use Kaufman ion source from the United States

4. The RF angle can be adjusted arbitrarily, and etching can be processed into vertical, inclined, and other shapes as needed

5. The substrate is directly mounted on a direct cooling device, so it can be etched at low temperatures

6. Configure a revolution rotation transmission mechanism to ensure a relatively uniform and smooth surface for the etched material

7. The machine design uses automated operation processes, so it can have a very user-friendly production process