CentroTherm RAPID200 Rapid Heat Treatment System

NegotiableUpdate on 03/19

Model

Nature of the Manufacturer: Producers

Product Category

Place of Origin

Online Consult

Overview

CentroTherm RAPID200 Rapid Heat Treatment System

Product Details

centrothermc. The RAPID 200 RTP system is a flexible process equipment used for uniform and controllable heating of silicon, germanium, and compound semiconductor wafers and devices in inert or active processing environments.Shangxianchuang Company applies precision temperature and environmental control, as well as automatic wafer transportation technology, to small-sized wafer processing at a reasonable cost.c. The heating conditions for RAPID 200 range from 200 ° C to 1200 ° C, and the heating time varies from a few seconds to a few minutes. Adopting advanced feedback temperature control and modern graphical user interface. The modular system design allows for the development of large-scale manufacturing and small-scale experimental production configurations using the same processing reaction chamber and processing formula.

·STI pad

·Enhance the reliability of the interface of high-k media

·Formation and Annealing of Interface Oxide

·Densification of sedimentary oxides

·FinFET gate oxidation

·RRAM and MRAM metal oxidation

·Processing various materials, including Si, compound semiconductors (SiC, GaN, InP, GaAs)）Sapphire, etc

·Capable of processing wafers or devices on support frames or inside "boxes"

·Fully automatic or semi-automatic wafer transportation (including the option to transport multiple wafers per trip)

·Advanced feedback temperature control (using optical pyrometer)

·Temperature range of 200 to 1200 ° C

·Wafer processing sizes range from 100 and 200 millimeters

·Excellent uniformity

·Low pressure operation